Transcend MTE550T-V NVMe PCIe M.2 Industrial Embedded SSD

Transcend MTE550T-V NVMe PCIe M.2 Industrial Embedded SSD


  • Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
  • Space-saving M.2 form factor (80mm) – ideal for mobile computing devices
  • PCIe Gen 3 x4 interface
  • Compliant with PCI Express specification Rev. 3.1
  • Compliant with NVM Express specification Rev. 1.3
  • SLC caching technology
  • LDPC ECC algorithm
  • Dynamic thermal throttling
  • RoHS 2.0 compliant
  • Supports Transcend SSD Scope Pro software


Rated to endure 3K P/E cycles, Transcend’s MTE550T-V M.2 SSD solution utilizes the PCI Express (PCIe) Gen 3 x4 interface, and is fully compatible with NVM Express (NVMe) 1.3 specifications. The next-generation PCIe NVMe protocol allows the SSD to achieve never-before-seen transfer speeds. The cost-effective MTE550T-V aims at high-end applications, such as digital audio/video production, gaming, and enterprise use at an attractive price. Powered by 64-layer 3D NAND TLC flash memory and built with DRAM cache, the SSD offers not only outstanding 4K random read and write performance but unmatched reliability. The MTE550T-V M.2 SSD is fully tested in-house to guarantee sustained functionality, enhanced endurance and optimal reliability in mission-critical applications.

Ordering Info

TS128GMTE550T-V – 128GB

TS256GMTE550T-V – 256GB

TS512GMTE550T-V – 512GB

System Integration

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Global Operations

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Full Warranty

Industry leading warranties on all solutions as standard

Technical Support

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Dimensions (Max.) 80 mm x 22 mm x 3.58 mm (3.15″ x 0.87″ x 0.14″)
Weight (Max.) 8 g (0.28 oz)
Form Factor M.2
M.2 Type 2280-D2-M
Bus Interface NVMe PCIe Gen3 x4
Flash Type 3D TLC NAND flash
Capacity 128 GB/
256 GB/
512 GB
Operating Environment
Operating Voltage 3.3V±5%
Operating Temperature 0°C (70°F) ~ 32°C (158°F)
Storage Temperature -40°C (-40°F) ~ 85°C (185°F)
Humidity 5% ~ 95%
Shock 1500 G, 0.5 ms, 3 axis
Vibration (Operating) 3 G (peak-to-peak), 5 Hz ~ 800 Hz (frequency)
Vibration (Non-operating) 5 G (peak-to-peak), 5 Hz ~ 800 Hz (frequency)
Power Consumption (Operation) 4.6 watt(s)
Power Consumption (Sleep) 0.6 watt(s)
Sequential Read/Write (ATTO, max.) Read: 1800 MB/s 
Write: 800 MB/s
Sequential Read/Write (CrystalDiskMark, max.) Read: 1800 MB/s 
Write: 800 MB/s
4K Random Read/Write (IOmeter, max.) Read: 142,000 IOPS 
Write: 134,000 IOPS
Mean Time Between Failures (MTBF) 1,500,000 hour(s)
Terabytes Written (Max.) 540 TB
Drive Writes Per Day (DWPD) 2 (3 yrs)
Capacity 128GB, 256GB, 512GB
Flash Type 64-layer 3D NAND flash
Form Factor M.2 2280
Operating Temperature Standard Temperature

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